| PART |
Description |
Maker |
| IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| PLL103-53XM PLL103-53 PLL103-53XC PLL103-53XI |
DDR SDRAM Buffer with 5 DDR or 3 SDR/3 DDR DIMMS
|
PLL[PhaseLink Corporation]
|
| PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| GS8644V18B-166I GS8644V36E-225 GS8644V18E-150I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8641Z18 GS8641Z32 GS8641Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS86422V72 GS8642V36 GS8642V18 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8640Z18 GS8640Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
